1 AM2300N analog power july, 2002 - rev. a preliminary publication order number: ds-am2300_d these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. n-channel 20-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low gate charge 7nc ? high performance ? high current handling ? miniature sot-23 surface mount package saves board space notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 2.5-v rated d s g v ds (v) r ds ( on ) ( ? )i d (a) 0.035 @ v gs = 4.5v 4.3 0.050 @ v gs = 2.5v 3.5 20 product summary symbol maximum units v ds 20 v gs 8 t a =25 o c4.3 t a =70 o c3.3 i dm 10 i s 0.46 a t a =25 o c1.25 t a =70 o c0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 5 sec 100 steady-state 166 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja
2 AM2300N analog power july, 2002 - rev. a preliminary publication order number: ds-am2300_d notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typical? must be validated for each customer appli cation by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.7 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 10 a v gs = 4.5 v, i d = 4.3 a 30 35 v gs = 2.5 v, i d = 3.5 a 40 50 forward tranconductance a g fs v ds = 5 v, i d = 3.0 a 11 s diode forward voltage v sd i s = 0.46 a, v gs = 0 v 0.651.20v total gate charge q g 7.0 gate-source charge q gs 1.20 gate-drain charge q g d 1.90 input capacitance c iss 700 output capacitance c oss 175 reverse transfer capacitance c rss 85 turn-on delay time t d(on) 9 rise time t r 11 turn-off delay time t d(off) 18 fall-time t f 5 pf parameter limits unit v dd = 10 v , i d = 1 a , r g = 6 ? , v gen = 4.5 v ns drain-source on-resistance a dynamic b v ds = 10 v, v gs = 4.5 v, i d = 3.0 a nc m ? r ds(on) v ds = 15 v, v gs = 0 v, f = 1mhz specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol
3 AM2300N analog power july, 2002 - rev. a preliminary publication order number: ds-am2300_d typical electrical characteristics figure 1. on-region characteristics figure 2. on-resistance variation with drain current and gate voltage figure 4. on-resistance variation with gate to source voltage figure 3. on-resistance variation with temperature figure 6. body diode forward voltage variation with source current and temperature figure 5. transfer characteristics
4 AM2300N analog power july, 2002 - rev. a preliminary publication order number: ds-am2300_d typical electrical characteristics normalized thermal transient impeda nce, junction to ambient figure 10. single pulse maximum power dissipation figure 9. maximum safe operating area figure 7. gate charge characteristic figure 8. capacitance characteristic
5 AM2300N analog power july, 2002 - rev. a preliminary publication order number: ds-am2300_d package information
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